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LT - Priverstinės spinduliuotės slenkstinės energijos nustatymo puslaidininkiuose būdas
EN - METHOD FOR DETERMINATION OF STIMULATED EMISSION THRESHOLD IN SEMICONDUCTORS

Legal status

Patent lapsed (non-payment of fees)

Bibliographic data
Indications of the International Patent Classification (IPC)
(51) INT.CL.: (2006.01) G01N 21/00
Patent
(11) Number of the document 5461
(13) Kind of document B
(21) Application number 2006 018
(22) Date of filing the application 2006-03-15
(41) Date of publication of the application 2007-09-25
(45) Date of publication of patent 2007-12-27
Applicant
(71) Vilniaus Universitetas, Universiteto g. 3, LT-01513 Vilnius, LT
Inventors
(72) Kęstutis JARAŠIŪNAS, LT
Ramūnas ALEKSIEJŪNAS, LT
Tadas MALINAUSKAS, LT
Grantee
(73) Vilniaus Universitetas, Universiteto g. 3, LT-01513 Vilnius, LT
Attorney or representative
(74) Kęstutis JARAŠIŪNAS, Ežero g. 23, LT-14159 Antežeriai, Vilniaus r., LT
Title
(54) METHOD FOR DETERMINATION OF STIMULATED EMISSION THRESHOLD IN SEMICONDUCTORS
Last renewal fee
Payment date Validity (years) Amount
2011-03-31 6 480.00 LTL
Legal status
Patent lapsed (non-payment of fees)
Invalidation date 2012-03-15