LT - Puslaidininkinis elementas, turintis legiruotas p/n struktūras, ir būdas jas izoliuoti naudojant ultratrumpus ultravioletinius lazerio impulsus
EN - SEMICONDUCTOR ELEMENT HAVING DOPED P/N STRUCTURES AND METHOD TO ISOLATE THEM USING ULTRA SHORT ULTRAVIOLET LASER PULSES
Legal status
Patent lapsed (non-payment of fees)
Bibliographic data
Indications of the International Patent Classification (IPC)
| (51) |
INT.CL.: (2011.01) |
H01L 21/00
B23K 26/00
|
Patent
| (11) |
Number of the document |
5937 |
| (13) |
Kind of document |
B |
| (21) |
Application number |
2011 078 |
| (22) |
Date of filing the application |
2011-09-01 |
| (41) |
Date of publication of the application |
2013-03-25 |
| (45) |
Date of publication of patent |
2013-05-27 |
Applicant
| (71) |
UAB "Precizika - MET SC",
Žirmūnų g. 139, LT-09120 Vilnius,
LT
|
Inventors
| (72) |
Julius JANUŠONIS, LT
Valdemaras JUZUMAS, LT
Karolis ŠULINSKAS, LT
|
Grantee
| (73) |
UAB "Precizika - MET SC",
Žirmūnų g. 139, LT-09120 Vilnius,
LT
|
Attorney or representative
| (74) |
Darius JANUŠONIS,
UAB "Precizika-MET SC", Žirmūnų g. 139, LT-09120 Vilnius,
LT
|
Title
| (54) |
SEMICONDUCTOR ELEMENT HAVING DOPED P/N STRUCTURES AND METHOD TO ISOLATE THEM USING ULTRA SHORT ULTRAVIOLET LASER PULSES
|
Last renewal fee
|
Payment date |
Validity (years) |
Amount |
|
2014-07-29 |
4 |
320.00
LTL
|
Legal status
|
Patent lapsed (non-payment of fees)
|
|
|
Invalidation date |
2015-09-01 |
