Patent details

EN | LT

LT - Kristalinių galio nitrido epitaksialinių heterostruktūrų auginimo būdas

EN -

Legal status

Application rejected

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Patent application specification | Search report | Patent specification

Bibliographic data

Indications of the International Patent Classification (IPC)
(51)	INT.CL.: (2006.01)	C30B 25/02 H01L 21/02

Patent
(11)	Number of the document
(13)	Kind of document	A
(21)	Application number	2001 099
(22)	Date of filing the application	2001-10-11
(41)	Date of publication of the application
(45)	Date of publication of patent

PCT application
(86)	Number	PCT/RU00/00062
	Date	2000-02-24

Applicant
(71)	NITRIDES EPITAXIAL WAFER TECHNOLOGY COMPANY LIMITED, 111/6, St. Lucia Street, Valletta VLT09, MT

Inventors
(72)	Vladimir Semenovich ABRAMOV, RU Vladimir Alexeevich GORBYLEV, RU Alexandr Grogorievich KIM, RU Georgy Georgievich CHUMBURIDZE, RU

Grantee
(73)	NITRIDES EPITAXIAL WAFER TECHNOLOGY COMPANY LIMITED, 111/6, St. Lucia Street, Valletta VLT09, MT

Attorney or representative
(74)	Marius JAKULIS - JASON, AAA Law, A. Goštauto g. 40B, Verslo centras "Dvyniai", LT-03163 Vilnius, LT

Title
(54)