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LT - METHOD FOR PRODUCING SILICON CARBIDE CRYSTALS

EN - METHOD FOR PRODUCING SILICON CARBIDE CRYSTALS

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Bibliographic data

Indications of the International Patent Classification (IPC)
(51)	INT.CL.	C30B 19/06
		C30B 19/12
		C30B 29/36

European patent
(11)	Number of the document	3192898
(13)	Kind of document	T
(96)	European patent application number	15839771.1
	Date of filing the European patent application	2015-09-10
(97)	Date of publication of the European application	2017-07-19
(45)	Date of publication and mention of the grant of the patent	2019-11-06
(46)	Date of publication of the claims translation

PCT application
(86)	Number	PCT/JP2015/075711
	Date	2015-09-10

PCT application publication
(87)	Number	WO 2016/039415
	Date	2016-03-17

Priority applications
(30)	Number	Date	Country code
	2014184978	2014-09-11	JP

Inventors
(72)	UJIHARA Toru, JP HARADA Shunta, JP KOIKE Daiki, JP UMEZAKI Tomonori, JP

Grantee
(73)	Central Glass Co., Ltd., 5253, Oaza Okiube, Ube-shi, Yamaguchi 755-0001, JP National University Corporation Nagoya University, 1, Furo-cho Chikusa-ku, Nagoya-shi, Aichi 464-8601, JP

Title
(54)	METHOD FOR PRODUCING SILICON CARBIDE CRYSTALS
	METHOD FOR PRODUCING SILICON CARBIDE CRYSTALS