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Teisinis statusas
Patentas neįsigaliojo (pagal EPK)
| (51) | INT.CL. | C30B 19/06 | |
| C30B 19/12 | |||
| C30B 29/36 |
| (11) | Patento numeris | 3192898 |
| (13) | Dokumento rūšis | T |
| (96) | Europos patento paraiškos numeris | 15839771.1 |
| Europos patento paraiškos padavimo data | 2015-09-10 | |
| (97) | Europos patento paraiškos paskelbimo data | 2017-07-19 |
| (45) | Paskelbimo apie Europos patento išdavimą data | 2019-11-06 |
| (46) | Apibrėžties vertimo paskelbimo data |
| (86) | Numeris | PCT/JP2015/075711 |
| Data | 2015-09-10 |
| (87) | Numeris | WO 2016/039415 |
| Data | 2016-03-17 |
| (30) | Numeris | Data | Šalis |
| 2014184978 | 2014-09-11 | JP |
| (72) |
UJIHARA Toru, JP
HARADA Shunta, JP
KOIKE Daiki, JP
UMEZAKI Tomonori, JP
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| (73) |
Central Glass Co., Ltd.,
5253, Oaza Okiube, Ube-shi, Yamaguchi 755-0001,
JP
National University Corporation Nagoya University, 1, Furo-cho Chikusa-ku, Nagoya-shi, Aichi 464-8601, JP |
| (54) | METHOD FOR PRODUCING SILICON CARBIDE CRYSTALS |
| METHOD FOR PRODUCING SILICON CARBIDE CRYSTALS |