LT - VERFAHREN ZUM HERSTELLEN VON HALBLEITERSCHEIBEN MIT AUS DER GASPHASE ABGESCHIEDENER EPITAKTISCHER SCHICHT IN EINER ABSCHEIDEKAMMER
EN - METHOD FOR MANUFACTURING SEMICONDUCTOR WAFERS HAVING AN EPITAXIAL LAYER DEPOSITED FROM THE GAS PHASE IN A DEPOSITION CHAMBER
Legal status
Patent not validated
Bibliographic data
Indications of the International Patent Classification (IPC)
| (51) |
INT.CL. |
H01L 21/68 |
(2006.01) |
|
|
H01L 21/68 |
(2013.01) |
European patent
| (11) |
Number of the document |
4075488 |
| (13) |
Kind of document |
T |
| (96) |
European patent application number |
21167990.7 |
|
Date of filing the European patent application |
2021-04-13 |
| (97) |
Date of publication of the European application |
2022-10-19 |
| (45) |
Date of publication and mention of the grant of the patent |
2024-02-28
|
| (46) |
Date of publication of the claims translation |
|
Inventors
| (72) |
Stettner, Thomas , DE
|
Grantee
| (73) |
Siltronic AG ,
Einsteinstraße 172 Tower B / Blue Tower, 81677 München,
DE
|
Title
| (54) |
VERFAHREN ZUM HERSTELLEN VON HALBLEITERSCHEIBEN MIT AUS DER GASPHASE ABGESCHIEDENER EPITAKTISCHER SCHICHT IN EINER ABSCHEIDEKAMMER |
| |
METHOD FOR MANUFACTURING SEMICONDUCTOR WAFERS HAVING AN EPITAXIAL LAYER DEPOSITED FROM THE GAS PHASE IN A DEPOSITION CHAMBER |
